Research

Our group focuses on the synthesis, surface engineering and processing of nanostructured materials by ALD techniques for both fundamental understandings and practical applications. The research topics at the ALD Research Group include:

  • Synthesis and surface modification of low-dimensional materials using ALD and Wet-chemistry techniques.
  • ALD for Catalysis and Environmental Applications.
  • ALD for Energy Conversion, Electrical & Optoelectronic Devices and Optical Materials.
  • ALD for Supercapacitors and Batteries.


What is ALD?

ALD - standing for Atomic Layer Deposition - is a gas-phase deposition technique, which is based on self-terminating surface reactions between volatile precursors and the substrate surface. In comparison with other deposition techniques, ALD offers unprecedented and unique assets, for examples, the ability to control the amount of deposited materials at the atomic level, pinhole-free films with the unrivaled capability of uniform coating on virtually any substrate, the ability to deposit multi-component materials with atomically precise control of elemental concentrations, etc. These characteristics make ALD one of the most powerful techniques for surface engineering and functionalization that has attracted enormous attention from researchers in both academia and industry during the last two decades.


Animation of Atomic Layer Deposition of Hafnium Oxide

Nanometer-thin films can be deposited using Atomic Layer Deposition (ALD). This example shows the ALD chemistry for producing HfO2 from gaseous precursors HfCl4 (Cl=green) and H2O (O=red). ALD allows a uniform coating to be applied to complex objects - such as the inside of the fibre optic cable shown here.

by Simon Elliott

Source:https://www.youtube.com/watch?v=HUsOMnV65jk&list=PL1c6UDogtL9C8JuYTuTZaS3XUzoK0ySDX&index=1

SoLayTec Ultrafast ALD for Al2O3

SoLayTec InPassion ALD tool for depositing Al2O3 in mass production. The next generation of industrial silicon solar cells aims at efficiencies of 20% and above. To achieve this goal using ever-thinner silicon wafers, a highly effective surface passivation of the cell (front and rear) is required. Al2O3 is well known in the PV community for its excellent surface passivation properties and negative fixed charge density. The InPassion ALD tool is capable of processing up to 4,500 wph.

by PV-Tech

Source: https://www.youtube.com/watch?v=igL-o9f4wF8