Our group focuses on the synthesis, surface engineering and processing of nanostructured materials by ALD techniques for both fundamental understandings and practical applications. The research topics at the ALD Research Group include:

What is ALD?

ALD - standing for Atomic Layer Deposition - is a gas-phase deposition technique, which is based on self-terminating surface reactions between volatile precursors and the substrate surface. In comparison with other deposition techniques, ALD offers unprecedented and unique assets, for examples, the ability to control the amount of deposited materials at the atomic level, pinhole-free films with the unrivaled capability of uniform coating on virtually any substrate, the ability to deposit multi-component materials with atomically precise control of elemental concentrations, etc. These characteristics make ALD one of the most powerful techniques for surface engineering and functionalization that has attracted enormous attention from researchers in both academia and industry during the last two decades.

ALD Around The World: The IDS Group At The University Of Twente

Welcome to the first episode of "ALD Around the World." Today, we explore the research group at the University of Twente in the Netherlands, known for their integration of technology, science, and engineering to drive global impact. At the forefront of this university is the Integrated Devices and Systems (IDS) group, where Dr. Alexey Kovalgin and senior engineer Tom Aarnink are experts in Atomic Layer Deposition (ALD).

by Atomic Layer Deposition News and Journal 


Animation of Atomic Layer Deposition of Hafnium Oxide

Nanometer-thin films can be deposited using Atomic Layer Deposition (ALD). This example shows the ALD chemistry for producing HfO2 from gaseous precursors HfCl4 (Cl=green) and H2O (O=red). ALD allows a uniform coating to be applied to complex objects - such as the inside of the fibre optic cable shown here.

by Simon Elliott 


SoLayTec Ultrafast ALD for Al2O3

SoLayTec InPassion ALD tool for depositing Al2O3 in mass production. The next generation of industrial silicon solar cells aims at efficiencies of 20% and above. To achieve this goal using ever-thinner silicon wafers, a highly effective surface passivation of the cell (front and rear) is required. Al2O3 is well known in the PV community for its excellent surface passivation properties and negative fixed charge density. The InPassion ALD tool is capable of processing up to 4,500 wph.

by PV-Tech